产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-220AB,
NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.00197 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 127 A, 100 V, 0.0056 ohm, 20 V, 4 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 55A TO-220AB
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 195 A, 40 V, 1.75 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 69 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 173 A, 60 V, 0.00275 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 2.1 mohm, 20 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 20 V, 4 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, TO-220
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 34 A, 150 V, 0.0122 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 68 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0043 ohm, 10 V, 4 V
(EN)
