产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 25A, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13.6 A, 30 V, 9.1 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 5.4 mohm, -10 V, -1.8 V
(EN)INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0071 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 38 mohm, 10 V, 1.7 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)INFINEON
场效应管, MOSFET
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV
(EN)VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
(EN)
