产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.2 A, 100 V, 0.0081 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 60 V, 45 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 150 V, 0.068 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -8.8 A, -20 V, 0.012 ohm, -4.5 V, -880 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.1 A, 150 V, 0.057 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0023 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.013 ohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -5.4A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0033 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 11.5 A, -12 V, 14 mohm, -4.5 V, -900 mV
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2.5 V
(EN)
