VISHAY
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC
VISHAY
晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.5 A, -20 V, 0.026 ohm, -4.5 V, -700 mV
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.05 ohm, -10 V, -1 V
VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
INFINEON
晶体管, MOSFET, N沟道, 5.4 A, 100 V, 39 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V
INFINEON
晶体管, MOSFET, P沟道, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV
VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 60 mohm, 10 V, 5.5 V
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 12.5A, SOIC
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -30V, 4.6A, SOIC
VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV