产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 13.7A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -20A, SOIC
(EN)INFINEON
场效应管, MOSFET, P沟道, -12V, -16A, SOIC-8
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 0.0027Ω, 93A, SOIC-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -20 V, 47 mohm, -4.5 V, -600 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)VISHAY
P CHANNEL MOSFET, -30V, 12.6A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 7.6A, SOIC
(EN)VISHAY
场效应管, MOSFET, N沟道, 20V, 21A, SOIC
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 30 V, 7.8 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 80V, 30A, SOIC
(EN)
