产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-223,
INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 4 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 4 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 3.1 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 1.17 A, -60 V, 800 mohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -680 mA, -100 V, 1.4 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.24 ohm, 5 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.16 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 360 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -260 mA, -250 V, 7.5 ohm, -10 V, -1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 137 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 137 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 10.7 A, 55 V, 40 mohm, 5 V, 1.5 V
(EN)CLARE
晶体管, MOSFET, N沟道, 130 mA, 350 V, 8 ohm, -350 mV
(EN)
CLARE
场效应管, MOSFET, N沟道, 耗尽型, 350V, 8Ω, 5MA, SOT-223-4, 整卷
(EN)
