产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-223,
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.6 A, -60 V, 0.145 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.095 ohm, -10 V, -2.6 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.092 ohm, 5 V, 1.68 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 790 mA, 250 V, 2 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 6A, SOT-223, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5A, SOT-223, 整卷
(EN)
