产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-223,
DIODES INC.
晶体管, MOSFET, P沟道, 450 mA, -60 V, 5 ohm, -10 V, -3.5 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 3.8A SOT-223
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 100 V, 700 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 45 mohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 60 mohm, 10 V, 1.6 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 2.1W, SOT-223
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 40 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
