产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-223,
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 300 mohm, -10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2.6 A, -60 V, 170 mohm, 20 V, -4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 120 mohm, 5 V, 1.68 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 5 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 5 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 7.5 A, 55 V, 80 mohm, 5 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 7.5 A, 55 V, 80 mohm, 5 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 7.4 A, 30 V, 0.018 ohm, 10 V, 1.5 V
(EN)
