产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-323,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
NXP
MOSFET, N CH, 55V, 300MA, 3-SOT-323
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -400 mA, -20 V, 0.7 ohm, -4.5 V, -500 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 1 ohm, 10 V, 1.7 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 4.5 A, 20 V, 0.02 ohm, 4 V, 850 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.4 A, -8 V, 100 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.29 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 260 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 260 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
