STMICROELECTRONICS
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.024 ohm, -10 V, -2.5 V
VISHAY
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.5 ohm, -10 V, -2 V
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V
INFINEON
晶体管, MOSFET, P沟道, 11 A, -30 V, 13.5 mohm, -10 V, -2.5 V
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -40 V, 0.026 ohm, -10 V, -2.2 V
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.072 ohm, -10 V, -3 V
VISHAY
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
VISHAY
晶体管, MOSFET, P沟道, -60 A, -40 V, 0.0058 ohm, -10 V, -2 V
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV
VISHAY
MOSFET Transistor, P Channel, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
TOSHIBA
晶体管, MOSFET, AEC-Q101, P沟道, -8 A, -60 V, 0.08 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
INFINEON
晶体管, MOSFET, P沟道, -14 A, -100 V, 0.2 ohm, -10 V, -4 V
INFINEON
场效应管, MOSFET, P沟道, -30V, -8A, SOIC