产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 300 V, 26 mohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 150 V, 11 mohm, 10 V, 5 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 12.6 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 7 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 5.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 9 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0128 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V
(EN)
