产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 53 A, 500 V, 80 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 500 V, 0.33 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 500 V, 0.039 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)
