产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 52A TO-220FP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0032Ω, 160A, TO-252AA-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 150 V, 33 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.04 ohm, 10 V, 5.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.002 ohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.9 A, 100 V, 26 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 44 A, 300 V, 38 mohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0059 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 190 V, 0.13 ohm, 10 V, 2.5 V
(EN)
