产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 150 V, 6.2 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38 A, 250 V, 75 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 104 A, 55 V, 8 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 55 V, 6.6 mohm, 10 V, 2.3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.8 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 250 V, 0.038 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 2 mohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 60 V, 0.0049 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 40 V, 0.008 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 41 A, 120 V, 0.0123 ohm, 10 V, 3 V
(EN)
