产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 18 mohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0041 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
(EN)
SOLID STATE
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D2-PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0106 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.8 A, 200 V, 180 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 550 V, 350 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 130 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0036 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
