产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.00325 ohm, 10 V, 3.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 187W, TO-220-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 3 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0033 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.003 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 8230 μohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V
(EN)
