产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 18 A, 55 V, 60 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 790 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 500 V, 235 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 42 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 120 V, 0.0098 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0225 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.003 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 16 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 20A, TO-220FP
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 191A, DFN5
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 100 V, 0.0064 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 3.7 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.3 mohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
