产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.012 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 55 V, 12 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 120 V, 160 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)VISHAY
场效应管, P通道, MOSFET, -40V, 40A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 76 A, 80 V, 0.0026 ohm, 10 V, 3.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 0.0027Ω, 93A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
(EN)VISHAY
MOSFET, N CHANNEL, 40V, 40A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.4 A, 250 V, 0.33 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 200 V, 140 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 150 V, 0.0103 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.5 A, 400 V, 0.43 ohm, 10 V, 4 V
(EN)
