产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 26 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 2.1W, SOT-223
(EN)
INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 40 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 18A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0027 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 11.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 40 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43.5 A, 100 V, 0.03 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 270A, D2PAK
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00379 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.011 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 55 V, 0.0165 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)
