产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 210 A, 75 V, 3.3 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.0081 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 123 A, 100 V, 0.0042 ohm, 10 V, 3.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 48.2 A, 75 V, 0.0147 ohm, 10 V, 1.65 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 60 V, 20 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00096 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 14A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00245 ohm, 10 V, 1.74 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 94A, TO-247AC
(EN)
