产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 80 V, 0.025 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.034 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 330 A, 40 V, 0.0006 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 150 V, 0.015 ohm, 10 V, 2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 12.8 A, 60 V, 0.059 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.017 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0016 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.0034 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0111 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 73 A, 30 V, 4.26 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.008 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 300 A, 25 V, 0.00057 ohm, 10 V, 1.66 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.033 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19.4 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 60 V, 0.021 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 378 A, 40 V, 0.00057 ohm, 10 V, 4 V
(EN)
