产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 150 V, 0.068 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.06 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0294 ohm, 10 V, 3.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.8 A, -500 V, 3 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.0083 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 150V, 33A, DPAK
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 53 A, 60 V, 0.0108 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.1 A, 150 V, 0.057 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 40 V, 0.0076 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 48 A, 40 V, 0.0098 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.013 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 36 A, 60 V, 0.015 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 40 V, 0.017 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 80 V, 0.018 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.022 ohm, 10 V, 3 V
(EN)
