产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0034 ohm, 10 V, 1.74 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 7A, SOICSIS
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0046 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0124 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 0.3 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 84 A, 80 V, 0.0074 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.2 A, 100 V, 0.0081 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 60 V, 45 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00099 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.016 ohm, 10 V, 3 V
(EN)
