产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0173OHM, 7.5A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 16.7 A, 60 V, 0.044 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 0.0086 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 42 A, 150 V, 0.0372 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 1.2A
(EN)
