产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 46 A, 80 V, 0.0102 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0051 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0073 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 35 V, 0.028 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0105 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 46 A, 80 V, 0.0112 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 250 V, 0.042 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 60 V, 17500 μohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 80 V, 0.0172 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 沟, N沟道, 6.1 A, 30 V, 0.026 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
