产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.7 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 19 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 280 A, 24 V, 0.0008 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 100 V, 9 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 75 V, 3.5 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 96 A, 60 V, 0.0061 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0028 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 70 A, 30 V, 7.6 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.015 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.015 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 4200 μohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 8.8 mohm, 10 V, 2.5 V
(EN)
