产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 58 A, 40 V, 0.005 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 150 V, 0.027 ohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 4 A, 30 V, 39 mohm, 10 V, 2.5 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 3 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, B-FET, N沟道, 500 mA, 450 V, 3.4 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 100 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.065 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 60 V, 15 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 40 A, -55 V, 16 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 60 mohm, 10 V, 3 V
(EN)
