产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 340mA, SC-70
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
晶体管, MOSFET, N沟道, 32 A, 300 V, 130 mohm, 10 V, 5 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 45 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)
MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)
INFINEON
场效应管, MOSFET, N沟道, 车用, 24V, 240A, TO-262
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)
