产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 9.3A, PQFN
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0029 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 20 V, 4.4 mohm, 10 V, 2 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道, 60V, 89A, 4-SOT-669
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 30 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0043 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, AEC-Q101, N沟道, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 60 V, 0.02 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0094 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.5 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 7 mohm, 10 V, 1.9 V
(EN)
