产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
场效应管, MOSFET, N沟道, 40V, 30A
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 115MA TO-236, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 2Ω, 300mA, TO-236
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 5A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V
(EN)VISHAY
场效应管, N通道, MOSFET, 60V, 20A, POWERPAK SO
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9 A, 40 V, 0.012 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE
(EN)INFINEON
晶体管, MOSFET, N沟道, 6 A, 100 V, 300 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
(EN)INFINEON
晶体管, MOSFET, N沟道, 8 A, 100 V, 180 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 mA, 60 V, 1.8 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
(EN)
