产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
DIODES INC.
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 80 V, 0.001 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.37 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.004 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 115 A, 150 V, 0.005 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 42 A, 30 V, 3200 μohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, VSON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 80 V, 0.014 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 47 A, 60 V, 0.011 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 9.3 A, 100 V, 0.12 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0032 ohm, 10 V, 1.63 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 64 A, 30 V, 0.0028 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0059 ohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 287 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)
