产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 48A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 16A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D-PAK
(EN)
INTERNATIONAL RECTIFIER
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.012 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00326 ohm, 10 V, 1.73 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 11A, SOIC
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 36W, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 55V, 49A, TO-220AB
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-247AC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)
