产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 A, 40 V, 0.00076 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 235 A, 40 V, 0.0011 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0032 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 40 V, 0.0027 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 104 A, 100 V, 0.0065 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0105 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.4A, IPAK
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 300mA, SC-70
(EN)
VISHAY
晶体管, MOSFET, N沟道, 58 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.1 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
MOSFET, N CHANNEL, 30V, 0.0056OHM, 44A, SOIC-8
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 20V, 211A, DIRECTFET
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.3A, TSOP6
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 60A, 0.0051OHM, SON-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0095 ohm, 10 V, 3 V
(EN)
