产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -600mV,
VISHAY
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.092 ohm, -4.5 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)
