产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -2V,
INFINEON
晶体管, MOSFET, P沟道, -23 A, -100 V, 0.117 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
NEXPERIA
场效应管, P通道, DMOS FET, -50V, -130MA, 3-SOT
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0108 ohm, -10 V, -2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -100V, 0.82OHM, -3.6A, TO-252-3
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.5 A, -100 V, 0.345 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V
(EN)ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.6 A, -40 V, 0.061 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -30 A, -60 V, 0.013 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -18 A, -40 V, 0.008 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -32 A, -80 V, 0.021 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.005 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -40 V, 0.02 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -60 V, 0.125 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 75 A, -55 V, 8 mohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 250W, TO-220
(EN)VISHAY
晶体管, MOSFET, P沟道, -385 mA, -30 V, 1.25 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)
