产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -4V,
INFINEON
晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -200V, 6.5A, TO-204AA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 33.5mA, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 18A, D-PAK
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, P通道, MOSFET, -200V, 6.5A, D2-PAK
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK-SO, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -14 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
(EN)
