产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 250V,
ROHM
晶体管, MOSFET, N沟道, 22 A, 250 V, 0.105 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 250 V, 0.051 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 90 A, 250 V, 33 mohm, 10 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 42 A, 250 V, 84 mohm, 10 V, 5.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 790 mA, 250 V, 2 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 250V, 3.8A, SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 36W, TO-220AB
(EN)ROHM
晶体管, MOSFET, N沟道, 51 A, 250 V, 0.048 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 51 A, 250 V, 0.048 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24.2 A, 250 V, 0.052 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 250 V, 0.085 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 250 V, 24 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.05 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 mA, 250 V, 30 ohm, 10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)
