产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -20V,
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
MOSFET Transistor, P Channel, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.008 ohm, -10 V, 770 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -8.8 A, -20 V, 0.012 ohm, -4.5 V, -880 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -8.2 A, -20 V, 0.0146 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -6A, SOT-23-3
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, 8-SOIC
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)
