产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -12V,
VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 28.5 mohm, -4.5 V, -400 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.03 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -5 A, -12 V, 0.019 ohm, -4.5 V, -300 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -0.75 A, -12 V, 400 mohm, -4.5 V, 680 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, 750 mA, -12 V, 180 mohm, -4.5 V, 680 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -12 V, 0.08 ohm, -4.5 V, -600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 1.1 A, -12 V, 0.066 ohm, -4.5 V, 600 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 1.1 A, -12 V, 0.066 ohm, -4.5 V, 600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.7 A, -12 V, 90 mohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.026 ohm, -4.5 V, -650 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, 4.5 V, 900 mV
(EN)
