产品分类：场效应管MOSFET晶体管(600V以上),
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.3 A, 1 kV, 1.38 ohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.35 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.2 A, 950 V, 1.1 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.8 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.35 ohm, 10 V, 2.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 4.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 0.64 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.9 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7.8 A, 800 V, 1.2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)
