产品分类：场效应管MOSFET晶体管(600V以上),
VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 650V, 11A, TO-220
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, UNIFET系列, 600V, 6.5A, TO-220F
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 6.2A D2-PAK
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 530 mohm, 10 V, 5 V
(EN)
