产品分类：场效应管MOSFET晶体管(600V以上),
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 6.3 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 26.7 A, 600 V, 0.17 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 3.5 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)
