产品分类：双路场效应管MOSFET晶体管,规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
(EN)
INFINEON
双路场效应管, MOSFET, P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 35V, SOIC
(EN)VISHAY
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 40 V, 0.0048 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8
(EN)
ON SEMICONDUCTOR
DUAL N/P CHANNEL MOSFET, 20V, WDFN6
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 17 A, 30 V, 0.0055 ohm, 4.5 V, 1.2 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 360 mohm, 4.5 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 40V, 60A, 整卷
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)
