TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 30 V, 1 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
INFINEON
场效应管, MOSFET, 双N沟道, 25V, 145A, PQFN-10
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双 N+P 30V
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -2.9 A, -20 V, 64 mohm, -4.5 V, -1.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -30 V, 0.013 ohm, -10 V, -1.8 V
INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 1.5 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 5.3 A, 20 V, 0.032 ohm, 4.5 V, 650 mV
VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 201 A, 30 V, 0.00077 ohm, 10 V, 1.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 1.03 A, 20 V, 0.3 ohm, 5 V, 900 mV