VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -550 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV
NEXPERIA
双路场效应管, MOSFET, Trench, 双N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.013 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 60 mohm, -4.5 V, -700 mV
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 1.33 A, 20 V, 0.3 ohm, 5 V, 900 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 0.0417 ohm, 4.5 V, 1.5 V
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 5.3 A, 20 V, 0.026 ohm, 4.5 V, 650 mV
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 400 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -880 mA, -20 V, 0.215 ohm, -4.5 V, -1.2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 0.035 ohm, 4.5 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V
STMICROELECTRONICS
双路场效应管, MOSFET, N和P沟道, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV