VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 30 mohm, 4.5 V, 1.2 V
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 80V, SOIC
VISHAY
晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 8.5A
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
VISHAY
场效应管, MOSFET, P沟道, -20V, -4A, SOIC-8
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 33 mohm, 4.5 V, 800 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道 + 肖特基, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
VISHAY
场效应管, MOSFET, 双P沟道
VISHAY
场效应管阵列, MOSFET, N/P沟道, 30V, SOIC
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.058 ohm, -4.5 V, -700 mV
INFINEON
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.02 ohm, 10 V, 2.2 V
ROHM
双路场效应管, MOSFET, 双P沟道, -2.5 A, -30 V, 0.06 ohm, -10 V, -2.5 V