产品分类：双路场效应管MOSFET晶体管,规格：漏源电压, Vds 60V,
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 1.7 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 mohm, 10 V, 2.4 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 60V, SOIC
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
(EN)
