产品分类：双路场效应管MOSFET晶体管,规格：漏源电压, Vds 60V,
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, 双N沟道, 60V, SOIC
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
MULTICOMP
场效应管, MOSFET, 双路N沟道, 60V, 4.4Ω, 115mA, SOT-363-6
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 74 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 510 mA, 60 V, 1 ohm, 10 V, 2.1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 0.085 ohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道 与 P 通道, 60V, 0.046Ω
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 22 A, 60 V, 0.027 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, 双N沟道, 60V, 115mA, SOT-363, 整卷
(EN)
