产品分类：双路场效应管MOSFET晶体管,规格：漏源电压, Vds 60V,
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, 双路, N通道, MOSFET, 60V, 115MA, SOT-3
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
(EN)
VISHAY
NPN/PNP MOSFET, 60V, SOIC
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 17 A, 60 V, 0.031 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 19.5 A, 60 V, 0.033 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, Trench, 双N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V
(EN)NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
(EN)
MULTICOMP
场效应管, MOSFET, 双路N沟道, 60V, 4.4Ω, 115mA, SOT-363-6
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
